Vishay Siliconix - SI2302CDS-T1-GE3

KEY Part #: K6417678

SI2302CDS-T1-GE3 Pricing (USD) [471021PC Stock]

  • 1 pcs$0.07853
  • 3,000 pcs$0.07418

Nimewo Pati:
SI2302CDS-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 20V 2.6A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - RF, Diodes - Zener - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI2302CDS-T1-GE3 electronic components. SI2302CDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2302CDS-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2302CDS-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI2302CDS-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 20V 2.6A SOT23-3
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 57 mOhm @ 3.6A, 4.5V
Vgs (th) (Max) @ Id : 850mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.5nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 710mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3