[3819PC Stock]
- Nimewo Pati:
- VWM200-01P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET 6N-CH 100V 210A V2.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in IXYS VWM200-01P electronic components. VWM200-01P can be shipped within 24 hours after order. If you have any demands for VWM200-01P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VWM200-01P Atribi pwodwi yo
Nimewo Pati :
VWM200-01P
Manifakti :
IXYS
Deskripsyon :
MOSFET 6N-CH 100V 210A V2
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
6 N-Channel (3-Phase Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
210A
RD sou (Max) @ Id, Vgs :
5.2 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
430nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
V2-PAK
Pake Aparèy Founisè :
V2-PAK
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