IXYS - IXFN360N15T2

KEY Part #: K6399966

IXFN360N15T2 Pricing (USD) [2523PC Stock]

  • 1 pcs$18.02700
  • 10 pcs$16.67648
  • 25 pcs$15.32411
  • 100 pcs$14.24244
  • 250 pcs$13.07058

Nimewo Pati:
IXFN360N15T2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 150V 310A SOT227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXFN360N15T2 electronic components. IXFN360N15T2 can be shipped within 24 hours after order. If you have any demands for IXFN360N15T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN360N15T2 Atribi pwodwi yo

Nimewo Pati : IXFN360N15T2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 150V 310A SOT227
Seri : GigaMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 310A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 715nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 47500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1070W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC

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