IXFH86N30T Pricing (USD) [14035PC Stock]
- 1 pcs$3.24594
- 90 pcs$3.22979
- Nimewo Pati:
- IXFH86N30T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 300V 86A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH86N30T electronic components. IXFH86N30T can be shipped within 24 hours after order. If you have any demands for IXFH86N30T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH86N30T Atribi pwodwi yo
Nimewo Pati :
IXFH86N30T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 300V 86A TO-247
Seri :
HiPerFET™, TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
86A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
43 mOhm @ 43A, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
11300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
860W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AD (IXFH)
Pake / Ka :
TO-247-3
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