IRLB8314PBF Pricing (USD) [91686PC Stock]
- 1 pcs$0.44737
- 10 pcs$0.39009
- 100 pcs$0.28472
- 500 pcs$0.21091
- 1,000 pcs$0.16873
- Nimewo Pati:
- IRLB8314PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 184A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Tiristors - SCR - Modil yo and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLB8314PBF electronic components. IRLB8314PBF can be shipped within 24 hours after order. If you have any demands for IRLB8314PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLB8314PBF Atribi pwodwi yo
Nimewo Pati :
IRLB8314PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 184A TO220
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.4 mOhm @ 68A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
60nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5050pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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