Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 600V 4A CPT
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.8 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
280pF @ 25V
Disipasyon Pouvwa (Max) :
40W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
CPT3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63