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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDD306P

ON Semiconductor - FDD306P

KEY Part #: K6403321

FDD306P Pricing (USD) [263402PC Stock]

  • 1 pcs$0.14112
  • 2,500 pcs$0.14042
Nimewo Pati:
FDD306P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 12V 6.7A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Diodes - RF, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - JFETs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDD306P electronic components. FDD306P can be shipped within 24 hours after order. If you have any demands for FDD306P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD306P Atribi pwodwi yo

Nimewo Pati : FDD306P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 12V 6.7A DPAK
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 28 mOhm @ 6.7A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1290pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 52W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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