[2642PC Stock]
- Nimewo Pati:
- GP1M009A020FG
- Manifakti:
- Global Power Technologies Group
- Detaye deskripsyon:
- MOSFET N-CH 200V 9A TO220F.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Zener - Single, Diodes - Zener - Arrays, Tiristors - TRIACs and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Global Power Technologies Group GP1M009A020FG electronic components. GP1M009A020FG can be shipped within 24 hours after order. If you have any demands for GP1M009A020FG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M009A020FG Atribi pwodwi yo
Nimewo Pati :
GP1M009A020FG
Manifakti :
Global Power Technologies Group
Deskripsyon :
MOSFET N-CH 200V 9A TO220F
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
400 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.6nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
414pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
17.3W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220F
Pake / Ka :
TO-220-3 Full Pack
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