RT1E040RPTR Pricing (USD) [662144PC Stock]
- 1 pcs$0.06175
- 3,000 pcs$0.06144
- Nimewo Pati:
- RT1E040RPTR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 30V 4A TSST8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RT1E040RPTR electronic components. RT1E040RPTR can be shipped within 24 hours after order. If you have any demands for RT1E040RPTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RT1E040RPTR Atribi pwodwi yo
Nimewo Pati :
RT1E040RPTR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 30V 4A TSST8
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1000pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
550mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSST
Pake / Ka :
8-SMD, Flat Lead
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