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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. ALD212900ASAL

Advanced Linear Devices Inc. - ALD212900ASAL

KEY Part #: K6521973

ALD212900ASAL Pricing (USD) [23350PC Stock]

  • 1 pcs$1.76500
  • 50 pcs$1.32201
Nimewo Pati:
ALD212900ASAL
Manifakti:
Advanced Linear Devices Inc.
Detaye deskripsyon:
MOSFET 2N-CH 10.6V 0.08A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Advanced Linear Devices Inc. ALD212900ASAL electronic components. ALD212900ASAL can be shipped within 24 hours after order. If you have any demands for ALD212900ASAL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ALD212900ASAL Atribi pwodwi yo

Nimewo Pati : ALD212900ASAL
Manifakti : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10.6V 0.08A 8SOIC
Seri : EPAD®, Zero Threshold™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80mA
RD sou (Max) @ Id, Vgs : 14 Ohm
Vgs (th) (Max) @ Id : 10mV @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 30pF @ 5V
Pouvwa - Max : 500mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC

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