[4005PC Stock]
- Nimewo Pati:
- IRFHM8363TR2PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 11A 8PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFHM8363TR2PBF electronic components. IRFHM8363TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM8363TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8363TR2PBF Atribi pwodwi yo
Nimewo Pati :
IRFHM8363TR2PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 30V 11A 8PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A
RD sou (Max) @ Id, Vgs :
14.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1165pF @ 10V
Pouvwa - Max :
2.7W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
8-PQFN (3.3x3.3), Power33
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