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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. IXFN66N50Q2

IXYS - IXFN66N50Q2

KEY Part #: K6413301

[13147PC Stock]

    Nimewo Pati:
    IXFN66N50Q2
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 500V 66A SOT-227B.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in IXYS IXFN66N50Q2 electronic components. IXFN66N50Q2 can be shipped within 24 hours after order. If you have any demands for IXFN66N50Q2, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFN66N50Q2 Atribi pwodwi yo

    Nimewo Pati : IXFN66N50Q2
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 500V 66A SOT-227B
    Seri : HiPerFET™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 66A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 80 mOhm @ 500mA, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 8mA
    Chaje Gate (Qg) (Max) @ Vgs : 199nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 6800pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 735W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake Aparèy Founisè : SOT-227B
    Pake / Ka : SOT-227-4, miniBLOC

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