IPB083N10N3GATMA1 Pricing (USD) [125954PC Stock]
- 1 pcs$0.29366
- Nimewo Pati:
- IPB083N10N3GATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 80A TO263-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB083N10N3GATMA1 electronic components. IPB083N10N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB083N10N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB083N10N3GATMA1 Atribi pwodwi yo
Nimewo Pati :
IPB083N10N3GATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 80A TO263-3
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
8.3 mOhm @ 73A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 75µA
Chaje Gate (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3980pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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