Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2N-CH 35V 6A 8SOP
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
35V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A
RD sou (Max) @ Id, Vgs :
37 mOhm @ 6A, 10V
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
470pF @ 20V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-SOP