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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDMS3660AS

ON Semiconductor - FDMS3660AS

KEY Part #: K6522113

FDMS3660AS Pricing (USD) [138425PC Stock]

  • 1 pcs$0.26720
  • 3,000 pcs$0.25922
Nimewo Pati:
FDMS3660AS
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 30V 13A/30A 8QFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS3660AS electronic components. FDMS3660AS can be shipped within 24 hours after order. If you have any demands for FDMS3660AS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS3660AS Atribi pwodwi yo

Nimewo Pati : FDMS3660AS
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 30V 13A/30A 8QFN
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A, 30A
RD sou (Max) @ Id, Vgs : 8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 2230pF @ 15V
Pouvwa - Max : 1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : Power56

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