IXFR21N100Q Pricing (USD) [5495PC Stock]
- 1 pcs$8.71572
- 30 pcs$8.67236
- Nimewo Pati:
- IXFR21N100Q
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1KV 18A ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Rèkteur - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXFR21N100Q electronic components. IXFR21N100Q can be shipped within 24 hours after order. If you have any demands for IXFR21N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR21N100Q Atribi pwodwi yo
Nimewo Pati :
IXFR21N100Q
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1KV 18A ISOPLUS247
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
500 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
350W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS247™
Pake / Ka :
ISOPLUS247™
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