SIB912DK-T1-GE3 Pricing (USD) [471021PC Stock]
- 1 pcs$0.07853
- 3,000 pcs$0.07418
- Nimewo Pati:
- SIB912DK-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 1.5A SC-75-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIB912DK-T1-GE3 electronic components. SIB912DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB912DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB912DK-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIB912DK-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 20V 1.5A SC-75-6
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A
RD sou (Max) @ Id, Vgs :
216 mOhm @ 1.8A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
95pF @ 10V
Pouvwa - Max :
3.1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SC-75-6L Dual
Pake Aparèy Founisè :
PowerPAK® SC-75-6L Dual
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