Vishay Siliconix - SI1026X-T1-E3

KEY Part #: K6524469

[3821PC Stock]


    Nimewo Pati:
    SI1026X-T1-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET 2N-CH 60V 0.305A SOT563F.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI1026X-T1-E3 electronic components. SI1026X-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1026X-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI1026X-T1-E3 Atribi pwodwi yo

    Nimewo Pati : SI1026X-T1-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET 2N-CH 60V 0.305A SOT563F
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 305mA
    RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 500mA, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 30pF @ 25V
    Pouvwa - Max : 250mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : SOT-563, SOT-666
    Pake Aparèy Founisè : SC-89-6