Nimewo Pati :
SI1026X-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 60V 0.305A SOT563F
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
305mA
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
30pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
SC-89-6