Infineon Technologies - IRF8910TRPBF

KEY Part #: K6523189

IRF8910TRPBF Pricing (USD) [208877PC Stock]

  • 1 pcs$0.17708
  • 4,000 pcs$0.15670

Nimewo Pati:
IRF8910TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2N-CH 20V 10A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF8910TRPBF Atribi pwodwi yo

Nimewo Pati : IRF8910TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 20V 10A 8-SOIC
Seri : HEXFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A
RD sou (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.55V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 960pF @ 10V
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO