IXTH52P10P Pricing (USD) [18229PC Stock]
- 1 pcs$2.38064
- 120 pcs$2.36880
- Nimewo Pati:
- IXTH52P10P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 100V 52A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH52P10P electronic components. IXTH52P10P can be shipped within 24 hours after order. If you have any demands for IXTH52P10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH52P10P Atribi pwodwi yo
Nimewo Pati :
IXTH52P10P
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 100V 52A TO-247
Seri :
PolarP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
52A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
50 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2845pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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