IXYS - IXFK24N100Q3

KEY Part #: K6397923

IXFK24N100Q3 Pricing (USD) [4427PC Stock]

  • 1 pcs$11.25356
  • 10 pcs$10.22966
  • 100 pcs$8.69521

Nimewo Pati:
IXFK24N100Q3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 24A TO-264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - Objektif espesyal and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in IXYS IXFK24N100Q3 electronic components. IXFK24N100Q3 can be shipped within 24 hours after order. If you have any demands for IXFK24N100Q3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK24N100Q3 Atribi pwodwi yo

Nimewo Pati : IXFK24N100Q3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 24A TO-264
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 440 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 6.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 7200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1000W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264AA (IXFK)
Pake / Ka : TO-264-3, TO-264AA

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