Rohm Semiconductor - RP1E125XNTR

KEY Part #: K6412658

[13369PC Stock]


    Nimewo Pati:
    RP1E125XNTR
    Manifakti:
    Rohm Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 30V 12.5A MPT6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - SCR, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Rohm Semiconductor RP1E125XNTR electronic components. RP1E125XNTR can be shipped within 24 hours after order. If you have any demands for RP1E125XNTR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RP1E125XNTR Atribi pwodwi yo

    Nimewo Pati : RP1E125XNTR
    Manifakti : Rohm Semiconductor
    Deskripsyon : MOSFET N-CH 30V 12.5A MPT6
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12.5A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
    RD sou (Max) @ Id, Vgs : 12 mOhm @ 12.5A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 12.7nC @ 5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1000pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2W (Ta)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : MPT6
    Pake / Ka : 6-SMD, Flat Leads