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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
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  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTMFD4C88NT1G

ON Semiconductor - NTMFD4C88NT1G

KEY Part #: K6523694

NTMFD4C88NT1G Pricing (USD) [4079PC Stock]

  • 1,500 pcs$0.83704
Nimewo Pati:
NTMFD4C88NT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 30V 8DFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTMFD4C88NT1G electronic components. NTMFD4C88NT1G can be shipped within 24 hours after order. If you have any demands for NTMFD4C88NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFD4C88NT1G Atribi pwodwi yo

Nimewo Pati : NTMFD4C88NT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 30V 8DFN
Seri : -
Estati Pati : Last Time Buy
FET Kalite : 2 N-Channel (Dual) Asymmetrical
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.7A, 14.2A
RD sou (Max) @ Id, Vgs : 5.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 22.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1252pF @ 15V
Pouvwa - Max : 1.1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : 8-DFN (5x6)

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