Nimewo Pati :
CSD86311W1723
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET 2N-CH 25V 4.5A 12DSBGA
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A
RD sou (Max) @ Id, Vgs :
39 mOhm @ 2A, 8V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
585pF @ 12.5V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
12-UFBGA, DSBGA
Pake Aparèy Founisè :
12-DSBGA