SIZ328DT-T1-GE3 Pricing (USD) [229895PC Stock]
- 1 pcs$0.16089
- Nimewo Pati:
- SIZ328DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET DUAL N-CHAN 25V POWERPAIR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZ328DT-T1-GE3 electronic components. SIZ328DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ328DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ328DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZ328DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET DUAL N-CHAN 25V POWERPAIR
Seri :
TrenchFET® Gen IV
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
RD sou (Max) @ Id, Vgs :
15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.9nC @ 10V, 11.3nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
325pF @ 10V, 600pF @ 10V
Pouvwa - Max :
2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-Power33 (3x3)
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