Toshiba Semiconductor and Storage - TK12J60U(F)

KEY Part #: K6400468

TK12J60U(F) Pricing (USD) [22864PC Stock]

  • 1 pcs$1.98315
  • 50 pcs$1.59357
  • 100 pcs$1.45193
  • 500 pcs$1.17569
  • 1,000 pcs$0.94070

Nimewo Pati:
TK12J60U(F)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 600V 12A TO-3PN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK12J60U(F) electronic components. TK12J60U(F) can be shipped within 24 hours after order. If you have any demands for TK12J60U(F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK12J60U(F) Atribi pwodwi yo

Nimewo Pati : TK12J60U(F)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 600V 12A TO-3PN
Seri : DTMOSII
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 400 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 720pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 144W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3P(N)
Pake / Ka : TO-3P-3, SC-65-3