Toshiba Semiconductor and Storage - TK380P65Y,RQ

KEY Part #: K6401985

TK380P65Y,RQ Pricing (USD) [167001PC Stock]

  • 1 pcs$0.24485
  • 2,000 pcs$0.24363

Nimewo Pati:
TK380P65Y,RQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CHANNEL 650V 9.7A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK380P65Y,RQ Atribi pwodwi yo

Nimewo Pati : TK380P65Y,RQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CHANNEL 650V 9.7A DPAK
Seri : DTMOSV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 360µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 590pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 80W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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