[12264PC Stock]
- Nimewo Pati:
- STS1HNK60
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 600V 300MA 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STS1HNK60 electronic components. STS1HNK60 can be shipped within 24 hours after order. If you have any demands for STS1HNK60, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STS1HNK60 Atribi pwodwi yo
Nimewo Pati :
STS1HNK60
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 600V 300MA 8-SOIC
Seri :
SuperMESH™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
156pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Tc)
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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