Infineon Technologies - IPD50R500CEATMA1

KEY Part #: K6402336

[2739PC Stock]


    Nimewo Pati:
    IPD50R500CEATMA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 500V 7.6A PG-TO252.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - JFETs, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPD50R500CEATMA1 electronic components. IPD50R500CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R500CEATMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPD50R500CEATMA1 Atribi pwodwi yo

    Nimewo Pati : IPD50R500CEATMA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 500V 7.6A PG-TO252
    Seri : CoolMOS™ CE
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 13V
    RD sou (Max) @ Id, Vgs : 500 mOhm @ 2.3A, 13V
    Vgs (th) (Max) @ Id : 3.5V @ 200µA
    Chaje Gate (Qg) (Max) @ Vgs : 18.7nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 433pF @ 100V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 57W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-TO252-3
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63