IRFPF50PBF Pricing (USD) [14364PC Stock]
- 1 pcs$2.50318
- 10 pcs$2.23347
- 100 pcs$1.83155
- 500 pcs$1.48310
- 1,000 pcs$1.25080
- Nimewo Pati:
- IRFPF50PBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 900V 6.7A TO-247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFPF50PBF electronic components. IRFPF50PBF can be shipped within 24 hours after order. If you have any demands for IRFPF50PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFPF50PBF Atribi pwodwi yo
Nimewo Pati :
IRFPF50PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 900V 6.7A TO-247AC
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.6 Ohm @ 4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
190W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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