GeneSiC Semiconductor - GA05JT12-263

KEY Part #: K6399928

GA05JT12-263 Pricing (USD) [8145PC Stock]

  • 1 pcs$5.50875
  • 10 pcs$4.95743
  • 25 pcs$4.51665
  • 100 pcs$4.07608
  • 250 pcs$3.74558
  • 500 pcs$3.41508

Nimewo Pati:
GA05JT12-263
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 1200V 15A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA05JT12-263 electronic components. GA05JT12-263 can be shipped within 24 hours after order. If you have any demands for GA05JT12-263, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA05JT12-263 Atribi pwodwi yo

Nimewo Pati : GA05JT12-263
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1200V 15A
Seri : -
Estati Pati : Active
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 106W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK (7-Lead)
Pake / Ka : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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