IXYS - IXFT150N25X3HV

KEY Part #: K6393666

IXFT150N25X3HV Pricing (USD) [8978PC Stock]

  • 1 pcs$4.59019

Nimewo Pati:
IXFT150N25X3HV
Manifakti:
IXYS
Detaye deskripsyon:
250V/150A ULTRA JUNCTION X3-CLAS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Tiristors - SCR, Tiristors - TRIACs, Transistors - Objektif espesyal and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFT150N25X3HV electronic components. IXFT150N25X3HV can be shipped within 24 hours after order. If you have any demands for IXFT150N25X3HV, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFT150N25X3HV Atribi pwodwi yo

Nimewo Pati : IXFT150N25X3HV
Manifakti : IXYS
Deskripsyon : 250V/150A ULTRA JUNCTION X3-CLAS
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 150A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 9 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 154nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 10400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 780W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268HV
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA