[4071PC Stock]
- Nimewo Pati:
- IRFHE4250DTRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 25V 86A/303A PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - RF, Diodes - Zener - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFHE4250DTRPBF electronic components. IRFHE4250DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFHE4250DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHE4250DTRPBF Atribi pwodwi yo
Nimewo Pati :
IRFHE4250DTRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 25V 86A/303A PQFN
Seri :
FASTIRFET™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
86A, 303A
RD sou (Max) @ Id, Vgs :
2.75 mOhm @ 27A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 35µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1735pF @ 13V
Pouvwa - Max :
156W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
32-PowerWFQFN
Pake Aparèy Founisè :
32-PQFN (6x6)
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