IXYS - IXFX15N100

KEY Part #: K6414990

IXFX15N100 Pricing (USD) [12564PC Stock]

  • 30 pcs$6.69438

Nimewo Pati:
IXFX15N100
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1KV 15A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - Rèkteur - Single and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFX15N100 electronic components. IXFX15N100 can be shipped within 24 hours after order. If you have any demands for IXFX15N100, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX15N100 Atribi pwodwi yo

Nimewo Pati : IXFX15N100
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1KV 15A PLUS247
Seri : HiPerFET™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 700 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 220nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3

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