Toshiba Semiconductor and Storage - TK46A08N1,S4X

KEY Part #: K6393035

TK46A08N1,S4X Pricing (USD) [65859PC Stock]

  • 1 pcs$0.65642

Nimewo Pati:
TK46A08N1,S4X
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 80V 46A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK46A08N1,S4X electronic components. TK46A08N1,S4X can be shipped within 24 hours after order. If you have any demands for TK46A08N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK46A08N1,S4X Atribi pwodwi yo

Nimewo Pati : TK46A08N1,S4X
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 80V 46A TO-220
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 46A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 8.4 mOhm @ 23A, 10V
Vgs (th) (Max) @ Id : 4V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 37nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 35W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack