IXYS - IXGQ85N33PCD1

KEY Part #: K6421822

IXGQ85N33PCD1 Pricing (USD) [40484PC Stock]

  • 1 pcs$1.01686
  • 30 pcs$1.01180

Nimewo Pati:
IXGQ85N33PCD1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 330V 85A 150W TO3P.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in IXYS IXGQ85N33PCD1 electronic components. IXGQ85N33PCD1 can be shipped within 24 hours after order. If you have any demands for IXGQ85N33PCD1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGQ85N33PCD1 Atribi pwodwi yo

Nimewo Pati : IXGQ85N33PCD1
Manifakti : IXYS
Deskripsyon : IGBT 330V 85A 150W TO3P
Seri : Polar™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 330V
Kouran - Pèseptè (Ic) (Max) : 85A
Kouran - Pèseptè batman (Icm) : -
Vce (sou) (Max) @ Vge, Ic : 3V @ 15V, 100A
Pouvwa - Max : 150W
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 80nC
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : -
Ranvèse Tan Reverse (trr) : 250ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3P-3, SC-65-3
Pake Aparèy Founisè : TO-3P