[3463PC Stock]
- Nimewo Pati:
- PHK4NQ20T,518
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 200V 4A SOT96-1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PHK4NQ20T,518 electronic components. PHK4NQ20T,518 can be shipped within 24 hours after order. If you have any demands for PHK4NQ20T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHK4NQ20T,518 Atribi pwodwi yo
Nimewo Pati :
PHK4NQ20T,518
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 200V 4A SOT96-1
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
130 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1230pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
6.25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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