STB8NM60T4 Pricing (USD) [58751PC Stock]
- 1 pcs$0.66554
- Nimewo Pati:
- STB8NM60T4
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 8A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STB8NM60T4 electronic components. STB8NM60T4 can be shipped within 24 hours after order. If you have any demands for STB8NM60T4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB8NM60T4 Atribi pwodwi yo
Nimewo Pati :
STB8NM60T4
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 8A D2PAK
Seri :
MDmesh™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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