Nimewo Pati :
IRFU9110PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 100V 3.1A I-PAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.2 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
200pF @ 25V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251AA
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA