IXTN210P10T Pricing (USD) [2706PC Stock]
- 1 pcs$17.69040
- 20 pcs$17.60239
- Nimewo Pati:
- IXTN210P10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 100V 210A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTN210P10T electronic components. IXTN210P10T can be shipped within 24 hours after order. If you have any demands for IXTN210P10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN210P10T Atribi pwodwi yo
Nimewo Pati :
IXTN210P10T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 100V 210A SOT-227
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
210A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 105A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
740nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
69500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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