Nimewo Pati :
RQ3E075ATTB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CHANNEL 30V 18A 8HSMT
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
23 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
10.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
930pF @ 15V
Disipasyon Pouvwa (Max) :
15W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-HSMT (3.2x3)