Diodes Incorporated - DMT3011LDT-7

KEY Part #: K6523107

DMT3011LDT-7 Pricing (USD) [231556PC Stock]

  • 1 pcs$0.15973
  • 3,000 pcs$0.14194

Nimewo Pati:
DMT3011LDT-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 30V 8A V-DFN3030-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMT3011LDT-7 electronic components. DMT3011LDT-7 can be shipped within 24 hours after order. If you have any demands for DMT3011LDT-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT3011LDT-7 Atribi pwodwi yo

Nimewo Pati : DMT3011LDT-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 30V 8A V-DFN3030-8
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Asymmetrical
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A, 10.7A
RD sou (Max) @ Id, Vgs : 20 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 641pF @ 15V
Pouvwa - Max : 1.9W
Operating Tanperati : -55°C ~ 155°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-VDFN Exposed Pad
Pake Aparèy Founisè : V-DFN3030-8 (Type K)