IXFP3N50PM Pricing (USD) [68164PC Stock]
- 1 pcs$0.63415
- 50 pcs$0.63100
- Nimewo Pati:
- IXFP3N50PM
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 500V 2.7A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Modil pouvwa chofè and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXFP3N50PM electronic components. IXFP3N50PM can be shipped within 24 hours after order. If you have any demands for IXFP3N50PM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP3N50PM Atribi pwodwi yo
Nimewo Pati :
IXFP3N50PM
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 500V 2.7A TO-220
Seri :
HiPerFET™, PolarHT™
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.3nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
409pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
36W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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