IXYS - IXFT26N50Q TR

KEY Part #: K6401294

[8829PC Stock]


    Nimewo Pati:
    IXFT26N50Q TR
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 500V 26A TO268.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in IXYS IXFT26N50Q TR electronic components. IXFT26N50Q TR can be shipped within 24 hours after order. If you have any demands for IXFT26N50Q TR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFT26N50Q TR Atribi pwodwi yo

    Nimewo Pati : IXFT26N50Q TR
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 500V 26A TO268
    Seri : HiPerFET™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 200 mOhm @ 13A, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 4mA
    Chaje Gate (Qg) (Max) @ Vgs : 95nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 3900pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 300W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TO-268 (IXFT)
    Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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