Rohm Semiconductor - R6012FNJTL

KEY Part #: K6418238

R6012FNJTL Pricing (USD) [56609PC Stock]

  • 1 pcs$0.76357
  • 1,000 pcs$0.75977

Nimewo Pati:
R6012FNJTL
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V 12A LPT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor R6012FNJTL electronic components. R6012FNJTL can be shipped within 24 hours after order. If you have any demands for R6012FNJTL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

R6012FNJTL Atribi pwodwi yo

Nimewo Pati : R6012FNJTL
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 600V 12A LPT
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 510 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 50W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LPTS (SC-83)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB