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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT22F80B

Microsemi Corporation - APT22F80B

KEY Part #: K6396158

APT22F80B Pricing (USD) [8040PC Stock]

  • 1 pcs$5.63655
  • 10 pcs$5.07334
  • 100 pcs$4.17131
  • 500 pcs$3.49488
Nimewo Pati:
APT22F80B
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 800V 22A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT22F80B electronic components. APT22F80B can be shipped within 24 hours after order. If you have any demands for APT22F80B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT22F80B Atribi pwodwi yo

Nimewo Pati : APT22F80B
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 800V 22A TO-247
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 500 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4595pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 625W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 [B]
Pake / Ka : TO-247-3

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