IRLS4030-7PPBF Pricing (USD) [8629PC Stock]
- 1 pcs$2.92184
- 10 pcs$2.60894
- 100 pcs$2.13942
- 500 pcs$1.73240
- 1,000 pcs$1.46106
- Nimewo Pati:
- IRLS4030-7PPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 190A D2PAK-7.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Tiristors - SCR, Tiristors - TRIACs, Diodes - RF, Transistors - JFETs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLS4030-7PPBF electronic components. IRLS4030-7PPBF can be shipped within 24 hours after order. If you have any demands for IRLS4030-7PPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLS4030-7PPBF Atribi pwodwi yo
Nimewo Pati :
IRLS4030-7PPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 190A D2PAK-7
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
190A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.9 mOhm @ 110A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
140nC @ 4.5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
11490pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
370W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK (7-Lead)
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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