[2608PC Stock]
- Nimewo Pati:
- RAQ045P01TCR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 12V 4.5A TUMT6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - JFETs and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RAQ045P01TCR electronic components. RAQ045P01TCR can be shipped within 24 hours after order. If you have any demands for RAQ045P01TCR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RAQ045P01TCR Atribi pwodwi yo
Nimewo Pati :
RAQ045P01TCR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 12V 4.5A TUMT6
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 4.5V
Vgs (Max) :
-8V
Antre kapasite (Ciss) (Max) @ Vds :
4200pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
600mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TSMT6 (SC-95)
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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