Nexperia USA Inc. - PSMN027-100PS,127

KEY Part #: K6418708

PSMN027-100PS,127 Pricing (USD) [75420PC Stock]

  • 1 pcs$0.51844
  • 10 pcs$0.45991
  • 100 pcs$0.34385
  • 500 pcs$0.26666
  • 1,000 pcs$0.21052

Nimewo Pati:
PSMN027-100PS,127
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 100V TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN027-100PS,127 Atribi pwodwi yo

Nimewo Pati : PSMN027-100PS,127
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 100V TO220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 37A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 26.8 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1624pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 103W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3