ON Semiconductor - FQD2N100TM

KEY Part #: K6418803

FQD2N100TM Pricing (USD) [155193PC Stock]

  • 1 pcs$0.23833
  • 2,500 pcs$0.22517

Nimewo Pati:
FQD2N100TM
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 1000V 1.6A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQD2N100TM electronic components. FQD2N100TM can be shipped within 24 hours after order. If you have any demands for FQD2N100TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD2N100TM Atribi pwodwi yo

Nimewo Pati : FQD2N100TM
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 1000V 1.6A DPAK
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 9 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15.5nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 520pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 50W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63