Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 1000V 1.6A DPAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
520pF @ 25V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63